Minghao Jin
6Patents
2h-index
9Co-inventors
33Inventor score
Filing activity: Jun 2, 2014 → Aug 30, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9425788B1 | Current sensors and methods of improving accuracy thereof | Electricity | 5 | Active |
| US9443973B2 | Semiconductor device with charge compensation region underneath gate trench | Electricity | 5 | Active |
| US9496339B2 | Semiconductor device comprising trench structures | Electricity | 1 | Active |
| US9324823B2 | Semiconductor device having a tapered gate structure and method | Electricity | 1 | Active |
| US10199456B2 | Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench | Electricity | 0 | Active |
| US9478639B2 | Electrode-aligned selective epitaxy method for vertical power devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.