P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure
US9496350B2 · kind B2 · utility
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Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]<100.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.