Contact first replacement metal gate
US9496362B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2016 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jan 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique relates to forming a semiconductor device. Sacrificial gates are formed on a channel region of a substrate. Epitaxial layers are grown on source-drain areas between the sacrificial gates. A contact liner and contact material are deposited. The liner and the contact material are removed from above the sacrificial gates. Contact areas are blocked with one or more masking materials and etched. The masking material is removed. The contact material is partially recessed and a nitride liner deposited. An oxide layer is deposited and the sacrificial gate is removed. A metal gate is formed on the channel region and recessed. Insulator material and metal gate material are recessed and a cap is formed over the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.