Epitaxial source/drain regions in FinFETs and methods for forming the same

US9496398B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tung Ying Lee · Baoshan, TW
• Chen-Han Wang · Zhubei City, TW

Key dates

• Filing date: Jan 15, 2014
• Grant date: Nov 15, 2016
• Expiry date: Jul 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6213

Abstract

An embodiment is a structure including a substrate having a fin and an isolation region adjoining the fin, and a raised epitaxial source/drain region on the fin. A first lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at an upper portion of the raised epitaxial source/drain region. A second lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a mid portion of the raised epitaxial source/drain region. A third lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a lower portion of the raised epitaxial source/drain region. The first lateral distance is greater than the second lateral distance, and the second lateral distance is less than the third lateral distance.