Solderable top metal for silicon carbide semiconductor devices
US9496421B2 · kind B2 · utility
2Cited by
96References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2008 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Sep 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.