Method for forming MEMS structure with an etch stop layer buried within inter-dielectric layer
US9499399B2 · kind B2 · utility
2Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jul 5, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a MEMS structure, in which an etch stop layer is formed to be buried within the inter-dielectric layer and, during an etch of the substrate and the inter-dielectric layer from backside to form a chamber, the etch stop layer protect the remaining inter-dielectric layer. The chamber thus formed has an opening at a backside of the substrate, a ceiling opposite to the opening, and a sidewall joining the ceiling. The sidewall may further include a portion of the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.