First-in-first-out memory with dual memory banks
US9501407B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2011 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Aug 27, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first-in-first-out memory may have first and second memory banks. A write controller may write data into the first and second memory banks. In performing write operations, the write controller may determine whether to write the data into the first bank or the second bank by evaluating a first bank empty flag and a second bank empty flag. When transitioning between writing in the first bank and the second bank, the write controller may latch a write address value indicative of the last location at which valid data was written in a given bank. A read controller may read data from the first and second memory bank. The read controller may determine when to transition between reading in the first bank and reading in the second bank by comparing a current read address to the latched write address value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.