Integrated circuit design changes using through-silicon vias
US9501603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Oct 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/394
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for adding an electrical interconnection within a three-dimensional integrated circuit (3-D IC) is disclosed. The method may include creating, within a design file of a 3-D IC that specifies a layout for a first chip of the 3-D IC, design data corresponding to a set of through-silicon via (TSV) reservation areas. The method may also include receiving an engineering change order (ECO) and releasing, in response to the ECO, at least one TSV reservation area for reuse. The method may also include adding, by re-using at least one TSV reservation area, an electrical interconnection within the design file of the first chip of the 3-D IC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.