Patent · US Active

Integrated circuit design changes using through-silicon vias

US9501603B2 · kind B2 · utility

37Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 5, 2014
Grant dateNov 22, 2016
Priority date
Expiry dateOct 7, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F30/394
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method for adding an electrical interconnection within a three-dimensional integrated circuit (3-D IC) is disclosed. The method may include creating, within a design file of a 3-D IC that specifies a layout for a first chip of the 3-D IC, design data corresponding to a set of through-silicon via (TSV) reservation areas. The method may also include receiving an engineering change order (ECO) and releasing, in response to the ECO, at least one TSV reservation area for reuse. The method may also include adding, by re-using at least one TSV reservation area, an electrical interconnection within the design file of the first chip of the 3-D IC.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.