Configurable non-volatile content addressable memory
US9502113B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 14, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jan 14, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/046
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Configurable Non-Volatile Content Addressable Memory (CNVCAM) cell consisting of a pair of complementary non-volatile memory devices and a MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) is disclosed. The CNVCAM cells can be constructed to form the NOR-type match line memory array and the NAND-type match line memory array. In contrast to the Random Access Memory (RAM) accessed by the address codes with the prior knowledge of memory locations, CNVCAM can be pre-configured into non-volatile memory content data and searched by an input content data to trigger the further computing process. The unique property of CNVCAM can provide a key component for neural computing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.