Ion implanter, ion implantation method, and beam measurement apparatus
US9502210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/303
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.