Inhibiting diffusion of elements between material layers of a layered circuit structure
US9502232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Feb 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating a layered circuit structure are provided, which include, for instance: depositing a first material layer above a substrate, the first material layer having an oxidized upper surface; providing a second material layer over the oxidized upper surface of the first material layer; and inhibiting diffusion of one or more elements from the oxidized upper surface of the first material layer into either the first material layer or the second material layer during the providing of the second material layer over the oxidized upper surface of the first material layer. The inhibiting may include one or more of modifying a characteristic(s) of the first material layer, forming a protective layer over the oxidized upper surface of the first material layer, or altering at least one process parameter employed in providing the second material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.