Patent · US Active

Method for selective oxide removal

US9502264B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Eddy Kunnen · Kessel-Lo, BE
Vasile Paraschiv · Kessel-Lo, BE

Key dates

Filing date	Aug 17, 2015
Grant date	Nov 22, 2016
Priority date	—
Expiry date	Aug 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76897
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.