Electron-beam (E-beam) based semiconductor device features
US9502283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Feb 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/535
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Electron-beam (e-beam) based semiconductor device features are disclosed. In a particular aspect, a method includes performing a first lithography process to fabricate a first set of cut pattern features on a semiconductor device. A distance of each feature of the first set of cut pattern features from the feature to an active area is greater than or equal to a threshold distance. The method further includes performing an electron-beam (e-beam) process to fabricate a second cut pattern feature on the semiconductor device. A second distance of the second cut pattern feature from the second cut pattern feature to the active area is less than or equal to the threshold distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.