Metal thin film resistor and process
US9502284B2 · kind B2 · utility
6Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.