Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US9502304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Sep 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a drain region of the second conductivity type, and the diode circuit is connected between the isolation structure and the drain region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.