Patent · US Active

Method of making a semiconductor device package with dummy gate

US9502334B2 · kind B2 · utility

0Cited by
35References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 15, 2016
Grant dateNov 22, 2016
Priority date—
Expiry dateJan 15, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device package includes a first substrate, which has a lower substrate surface and an upper substrate surface. A conductive dummy gate structure is disposed over the upper substrate surface. An interconnect structure is disposed over the conductive dummy gate structure. The interconnect structure includes a plurality of metal layers disposed within a dielectric structure and at least one of the metal layers is electrically coupled to the conductive dummy gate structure. A conductive through-substrate via extends from the lower substrate surface to an underside of the conductive dummy gate structure and is electrically coupled to the conductive dummy gate structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.