Adjacent device isolation
US9502414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) device may include a first active transistor of a first-type in a first-type region. The first active transistor may have a first-type work function material and a low channel dopant concentration in an active portion of the first active transistor. The IC device may also include a first isolation transistor of the first-type in the first-type region. The second active transistor may have a second-type work function material and the low channel dopant concentration in an active portion of the first isolation transistor. The first isolation transistor may be arranged adjacent to the first active transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.