Mustafa Badaroglu
34Patents
7h-index
30Co-inventors
69Inventor score
Filing activity: Mar 16, 2001 → Jul 29, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6941258B2 | Method, apparatus and computer program product for determination of noise in mixed signal systems | Physics | 220 | Expired |
| US8134358B2 | Method of auto calibrating a magnetic field sensor for drift and structure therefor | Physics | 72 | Active |
| US10332881B1 | Integrating a gate-all-around (GAA) field-effect transistor(s) (FET(S)) and a finFET(s) on a common substrate of a semiconductor die | Electricity | 31 | Active |
| US9871121B2 | Semiconductor device having a gap defined therein | Electricity | 22 | Active |
| US9793164B2 | Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices | Electricity | 18 | Active |
| US9799560B2 | Self-aligned structure | Electricity | 13 | Active |
| US10109646B1 | Selectively recessing trench isolation in three-dimensional (3D) transistors to vary channel structure exposures from trench isolation to control drive strength | Electricity | 11 | Active |
| US7987382B2 | Method and apparatus for minimizing the influence of a digital sub-circuit on at least partially digital circuits | Physics | 7 | Active |
| US8773157B2 | Test circuit for testing through-silicon-vias in 3D integrated circuits | Electricity | 7 | Active |
| US9953979B2 | Contact wrap around structure | Electricity | 7 | Active |
| US9824936B2 | Adjacent device isolation | Electricity | 5 | Active |
| US10283526B2 | Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop | Electricity | 4 | Active |
| US9502414B2 | Adjacent device isolation | Electricity | 4 | Active |
| US10607896B2 | Method of forming gate of semiconductor device and semiconductor device having same | Electricity | 4 | Active |
| US10043796B2 | Vertically stacked nanowire field effect transistors | Electricity | 3 | Active |
| US9985014B2 | Minimum track standard cell circuits for reduced area | Electricity | 3 | Active |
| US9728718B2 | Magnetic tunnel junction (MTJ) device array | Electricity | 3 | Active |
| US10090244B2 | Standard cell circuits employing high aspect ratio voltage rails for reduced resistance | Electricity | 2 | Active |
| US10157992B2 | Nanowire device with reduced parasitics | Electricity | 2 | Active |
| US9570509B2 | Magnetic tunnel junction (MTJ) device array | Electricity | 1 | Active |
| US10079293B2 | Semiconductor device having a gap defined therein | Electricity | 1 | Active |
| US7885326B2 | Method for determining a pulse position in a signal | Electricity | 1 | Active |
| US8233579B2 | Devices comprising delay line for applying variable delay to clock signal | Electricity | 1 | Active |
| US10032678B2 | Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devices | Electricity | 1 | Active |
| US12340304B2 | Partial sum management and reconfigurable systolic flow architectures for in-memory computation | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.