Patent · US Active

Nonvolatile memory device having a gate coupled to resistors

US9502468B2 · kind B2 · utility

1Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Strenz · Radebeul, DE
Robert Allinger · Unterhaching, DE

Key dates

Filing date	Mar 6, 2014
Grant date	Nov 22, 2016
Priority date	—
Expiry date	Aug 5, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A nonvolatile memory device having a first resistive element coupled between a common node and a bit line; a second resistive element coupled between the common node and a word line; and a pass transistor having a gate coupled to the common node, a first node coupled to a reference voltage, and a second node coupled to an output, wherein the word line is orthogonal to the bit line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.