Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
US9502603B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 12, 2011 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | May 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.