Patent · US Active

Optoelectronic component and method for the production thereof

US9502611B2 · kind B2 · utility

4Cited by
0References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 24, 2013
Grant dateNov 22, 2016
Priority date
Expiry dateSep 24, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/855

Abstract

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.