High energy invisible light light emitting diode having safety indication
US9502621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Mar 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The present invention includes a safety indication structure a high energy invisible light light emitting structure and two potential applying layers. The high energy invisible light light emitting structure includes a high energy invisible light light emitting layer that receives a forward to emit invisible light, and a P-type semiconductor layer and an N-type semiconductor layer respectively disposed at two sides of the high energy invisible light light emitting layer. The two potential applying layers are respectively in contact with the P-type semiconductor layer and the N-type semiconductor layer. The safety indication structure includes a photoluminescent light emitting layer disposed on the high energy invisible light light emitting structure. When the high energy invisible light light emitting structure emits invisible light, the photoluminescent light emitting layer absorbs and converts the invisible light to visible light, which serves as a signal warning for danger to ensure user safety.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.