Semiconductor device, magnetic memory device, and method of fabricating the same
US9502643B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jan 27, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jan 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A method of fabricating a semiconductor device includes forming conductive pillars on a substrate, sequentially forming a sacrificial layer and a molding structure between the conductive pillars, forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars, removing the sacrificial layer to form an air gap, removing the molding structure to form an expanded air gap, and patterning the conductive layer to open the expanded air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.