Method and control device for recovering NBTI/PBTI related parameter degradation in MOSFET devices
US9503088B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
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Key dates
| Filing date | Jan 10, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0944
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for recovering NBTI/PBTI related parameter degradation in MOSFET devices. The method includes operating the at least one MOSFET device in a standby mode, exiting the at least one MOSFET device from the standby mode, holding the at least one MOSFET device in an active state for a predetermined time span after exiting the standby mode, and operating the at least one MOSFET device in an operational mode after the predetermined time span has elapsed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.