Atomic-layer deposition apparatus using compound gas jet
US9506147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4583
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes a chamber having an atmosphere and a moveable substrate. A stationary support is located in the chamber that supports the moveable substrate. A pressurized-fluid source provides a compound fluid flow including an inert fluid surrounding a reactive fluid that flows simultaneously through the stationary support and impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.