Photoresist composition

US9507259B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials LLC · US

Inventors

• Mingqi Li · Sammamish, US
• Emad Aqad · Northborough, US
• Cong Liu · Lanzhou, CN
• Ching-Lung Chen · Miaoli City, TW
• Shintaro Yamada · Shrewsbury, US
• Cheng-Bai Xu · Upton, US
• Joseph Mattia · Marlborough, US

Key dates

• Filing date: May 29, 2012
• Grant date: Nov 29, 2016
• Expiry date: Aug 18, 2032

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/0397
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula:(Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-Xwherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.