Nanoscale metal oxide resistive switching element
US9508425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jul 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device structure. The non-volatile memory device structure comprises a first electrode formed from a first metal material, a resistive switching element overlying the first electrode. The resistive switching element comprises a metal oxide material characterized by one or more oxygen deficient sites. The device includes a second electrode overlying the resistive switching layer, the second electrode being formed from a second metal material. The second electrode is made from a noble metal. The one or more oxygen deficient sites are caused to migrate from one of the first electrode or the second electrode towards the other electrode upon a voltage applied to the first electrode or the second electrode. The device can have a continuous change in resistance upon applying a continuous voltage ramp, suitable for an analog device. Alternatively, the device can have a sharp change in resistance upon applying the continuous voltage ramp, suitable for a digital device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.