Method for forming metallic sub-collector for HBT and BJT transistors
US9508552B1 · kind B1 · utility
1Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.