Method for fabricating fin field effect transistor and semiconductor device
US9508556B1 · kind B1 · utility
16Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a fin field effect transistor (FinFET) is provided. The method includes steps as follows. A gate stack is formed over a substrate having a semiconductor fin. Recesses are formed in the semiconductor fin beside the gate stack. A pre-clean process is performed to remove native oxides on surfaces of the recesses. After the pre-clean process, a selectivity proximity push process is performed using a fluorine-containing gas and a first hydrogen gas to the recesses. Strained layers are formed in the recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.