Method for manufacturing semiconductor device
US9508564B2 · kind B2 · utility
0Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.