Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
US9508611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.