Semiconductor device and method of forming openings in thermally-conductive frame of FO-WLCSP to dissipate heat and reduce package height
US9508626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2010 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a thermally-conductive frame and interconnect structure formed over the frame. The interconnect structure has an electrical conduction path and thermal conduction path. A first semiconductor die is mounted to the electrical conduction path and thermal conduction path of the interconnect structure. A portion of a back surface of the first die is removed by grinding. An EMI shielding layer can be formed over the first die. The first die can be mounted in a recess of the thermally-conductive frame. An opening is formed in the thermally-conductive frame extending to the electrical conduction path of the interconnect structure. A second semiconductor die is mounted over the thermally-conductive frame opposite the first die. The second die is electrically connected to the interconnect structure using a bump disposed in the opening of the thermally-conductive frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.