Method of forming high electron mobility transistor
US9508807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Aug 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a high electron mobility transistor (HEMT) includes epitaxially growing a second III-V compound layer on a first III-V compound layer. The method further includes partially etching the second III-V compound layer to form two through holes in the second III-V compound layer. Additionally, the method includes forming a silicon feature in each of two through holes. Furthermore, the method includes depositing a metal layer on each silicon feature. Moreover, the method includes annealing the metal layer and each silicon feature to form corresponding salicide source/drain features. The method also includes forming a gate electrode over the second III-V compound layer between the salicide source/drain features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.