Semi-floating-gate device and its manufacturing method
US9508811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.