Radiation-hardened-by-design (RHBD) multi-gate device
US9508852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Sep 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
The present invention discloses a radiation-hardened-by-design (RHBD) multi-gate device and a fabrication method thereof. The multi-gate device of the present invention includes a substrate; a source region and a drain region, which are on the substrate; a protruding fin structure and a field dielectric layer between the source region and the drain region on the substrate; a gate dielectric and a gate electrode on the fin structure and the dielectric layer; and two isolation layers separated to each other, which are disposed in the drain region between the adjacent two fins, wherein an interlayer is sandwiched between the two isolation layers. The interlayer has a doping type which is opposite to that of the substrate so that a shunt PN junction is formed between the interlayer and the substrate, and the shunt PN junction has an electrode not connected to the drain so that a part of the charges collected by the shunt PN junction are not output to the drain and are ultimately guided out of the multi-gate devices, thereby weakening the influence of the single-event effect. In comparison with a multi-gate device of prior art, the multi-gate device of the present invention may effectiv…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.