RF amplifier module and methods of manufacture thereof
US9509251B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.