Bulk silicon carbide having low defect density
US9512542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jan 23, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.