Nanocrystal memory and methods for forming same

US9514945B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Cheong Min Hong · Austin, US
• Euhngi Lee · Austin, US

Key dates

• Filing date: Dec 12, 2014
• Grant date: Dec 6, 2016
• Expiry date: Dec 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/00

Abstract

A charge-storing device includes a charge-storing layer including nanocrystals. The nanocrystals are formed by a deposition technique incorporating deuterated hydrides. The deuterated hydride can be used to form an amorphous semiconductor material that is annealed to form nanoparticles to be incorporated into the charge-storing layer.