Composition for forming organic hard mask layer for use in lithography containing polymer having acrylamide structure
US9514949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2012 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | May 18, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film,wherein R1 to R4 have the same definition as ones in the specification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.