Methods for uniform imprint pattern transfer of sub-20 nm features
US9514950B2 · kind B2 · utility
3Cited by
13References
20Claims
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Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.