Backside contact to final substrate

US9514987B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jeffrey P. Gambino · Gresham, US
• Mark D. Jaffe · Shelburne, US
• Steven M. Shank · Jericho, US
• Anthony K. Stamper · Williston, US

Key dates

• Filing date: Jun 19, 2015
• Grant date: Dec 6, 2016
• Expiry date: Jun 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2221/68368
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Device structures and fabrication methods for a backside contact to a final substrate An electrically-conducting connection is formed that extends through a device layer of a silicon-on-insulator substrate and partially through a buried insulator layer of the silicon-on-insulator substrate. After the electrically-conducting connection is formed, a handle wafer of the silicon-on-insulator substrate is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is coupled to the buried insulator layer such that the electrically-conducting connection is coupled with the final substrate.