Semiconductor structure and method of forming the same
US9515021B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Oct 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with metal-doped etch stop layer therein and a method of manufacturing the same is disclosed. The method includes forming an semiconductor device with a interconnect structure that has a dielectric layer and a conductor therein, and an etch stop layer over the dielectric layer; applying a photo resist layer and patterning the photo resist layer to expose a portion of the etch stop layer on a top surface of the conductor over of the dielectric layer; and doping the exposed portion of the etch stop layer with an element to form a metal-doped etch stop layer. The formed metal-doped etch stop layer has a recess structure and functions as a conductive pad over the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.