Semiconductor device with air gap and method for fabricating the same
US9515022B2 · kind B2 · utility
21Cited by
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5Claims
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Assignee
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Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/679
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes preparing a substrate which includes a memory cell region and a peripheral circuit region; forming a buried word line in the substrate in the memory cell region; forming a planar gate structure over the substrate in the peripheral circuit region; forming a bit line structure over the substrate in the memory cell region; forming a first air spacers over a sidewalls of the planar gate structure; and forming a second air spacers over a sidewalls of the bit line structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.