Replacement metal gate

US9515070B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David V. Horak · South Burlington, US
• Effendi Leobandung · Stormville, US
• Stefan Schmitz · Stuttgart, DE
• Junli Wang · Slingerlands, US

Key dates

• Filing date: Dec 2, 2015
• Grant date: Dec 6, 2016
• Expiry date: Dec 2, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.