3D nonvolatile memory device having common word line
US9515084B2 · kind B2 · utility
14Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A 3D nonvolatile memory device including memory cells vertically stacked is disclosed. Word lines are integrally formed to be elongated over adjacent cell regions spaced apart from each other, and portions of the word lines between the cell regions are partially etched in a stepped shape to form word line contact regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.