Silicon carbide semiconductor device and method for producing the same
US9515160B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 20, 2016 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jan 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.