Monolithically isled back contact back junction solar cells
US9515217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Feb 12, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.