Light emitting diode with doped quantum wells and associated manufacturing method

US9515220B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Ivan-Christophe Robin · Grenoble, FR

Key dates

• Filing date: Nov 11, 2015
• Grant date: Dec 6, 2016
• Expiry date: Nov 11, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/818

Abstract

A light emitting diode based on GaN including an active zone located between an n-doped layer and a p-doped layer that together form a p-n junction, wherein the active zone includes at least one n-doped emissive layer.