Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9520282B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | May 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.