Ion beam activated directional deposition
US9520284B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Nov 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02277
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Approaches herein provide precise areal surface reaction with directional ion beam activation. Exemplary approaches include selectively forming a material within a trench of a semiconductor device using a plurality of successive deposition and activation cycles. Each of the plurality of deposition and activation cycles includes forming a precursor conformally along a set of surfaces of the trench, reacting the precursor with a capping compound to form a capping layer along the set of surfaces of the trench, and performing an ion implant to the semiconductor device to activate just a portion of the capping layer. In one approach, the ion implant activates just a portion of the capping layer along a bottom surface of the trench. In another approach, the ion implant activates just a portion of the capping layer along an upper section of a sidewall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.